| 摘要 |
PURPOSE:To make it possible to form a mask pattern with high accuracy by forming a standard mark on a mask blank with a charged beam radiator. CONSTITUTION:A mask blank 10 is composed of a mask substrate 11 and a light shielding film 12 formed on the substrate 11 and a standard mark 13 of carbon is formed on the film 12 with focused ion beams. The mark 13 has satisfactory edge shape and is detected with electron beams without an error at the time of producing a mask. When the thickness of the mark 13 is >=100Angstrom , the position can well be detected as a stepped mark. At the time of drawing an image with electron beams, a resist at the mark part is removed. High positional accuracy of a pattern can be attained. |
