| 摘要 |
PURPOSE:To prevent leakage of a current from a wiring layer to a semiconductor region by forming a P-well region on a region formed with a resistor and a pad, and setting the region to the same potential as those of the resistor and the pad. CONSTITUTION:After a p-well region 20 is formed on a region to be formed with a resistor 12 and a pad 15 in the same step as that of other p-well region, the resistor 12 and the pad 15 are formed in the region 20, and wirings 14 to be connected to the resistor 12 are connected from the opening 21 of an insulating film 11 to the region 20. A P<+> type region 22 having higher concentration than that of the region 20 is formed on a region to be connected with the wirings 14 of the region 20 so as to reduce its contact resistance. Accordingly, the potential of the region 20 follows up the variation in the potentials of the resistor 12 and the pad 15 to become substantially the same potential as those of the resistor 12 and the pad 15. Therefore, leakage of a current scarcely occurs. |
