发明名称 METHOD OF FORMING OXIDE FILM
摘要 <p>A method of forming an oxide film comprising at least: a first step of forming an oxide film on the surface of a substrate by bringing a solution of oxygen and/or a solution of oxygen-containing molecules into contact with the surface of the substrate on which the oxygen film is to be formed; and a second step of strengthening the bonding of oxygen and the atoms constituting the surface of the substrate in the oxide film by heat-treating the oxide film at a temperature higher than 20°C in a gas phase of oxygen, molecules containing oxygen, or inert gas alone, or a mixture of two or more of them.</p>
申请公布号 WO1990013911(P1) 申请公布日期 1990.11.15
申请号 JP1990000581 申请日期 1990.05.07
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址