| 摘要 |
PURPOSE:To restrain heat generated at a thin-film resistance from being conducted to a semiconductor light-emitting element and to prevent a characteristic of the element from being deteriorated by a method wherein a structure having a heat resistance is installed between a fused part of the semiconductor light-emitting element and the thin-film resistance part. CONSTITUTION:A modulating signal which has been input from the outside through a lead wire 14 is superposed on a laser diode 11 through a thin-film resistance 112 formed on a fused face, of the laser diode, of a heat sink 12. In this case, a groove 113 which generates a sufficiently large heat resistance so as not to conduct heat generated on one side to the other side is formed between the thin-film resistance part 112 and a fused part of the laser diode 11. Accordingly, heat generated by the thin-film resistance 112 is not conducted to a semiconductor light-emitting element and does not cause a rise in a temperature at a p-n junction part. Thereby, the characteristic of the semiconductor light-emitting element are not deteriorated by the rise in a threshold value of the semiconductor light-emitting element, a drop in an external differential quantum efficiency or the like. |
