| 摘要 |
PURPOSE:To achieve improved solderability and prevent fatigue breakdown from occurring for temperature cycle which is applied during use by using indium In as a solder for performing flip-chip junction of a semiconductor chip and using a junction structure which is suited for In. CONSTITUTION:Cr or Ti layer 5 is provided on the joining position of a semiconductor chip 1 or a circuit substrate 3 as an adhesion layer, a Pt layer 6 is provided on it as a barrier layer preventing diffusion of solder, and an Au layer 7 is provided on the uppermost layer as a soldering layer for forming a metallized layer 8. Thus, Au layer is used as a soldering layer for the uppermost layer which requires an improved wetting properties, a platinum(Pt) layer is used as a barrier layer which has improved joining properties with In solder, and does not create an intermetallic compound with In, thus preventing deterioration of mechanical strength, and Cr or Ti is used as an adhesion layer with a sufficient amount f adhesion strength with a semiconductor chip or a circuit substrate. Thus, it becomes possible to achieve a flip-chip junction with improved joining force and less aging.
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