| 摘要 |
<p>PURPOSE:To simplify a process by utilizing side etching of an insulation layer at the upper layer when forming a hole reaching a polycrystal silicon by etching. CONSTITUTION:A polycrystal silicon 2, NSG(Nondoped Silicon Glass) 3, and Pl-SiNx4 are accumulated on a crystal substrate 1 in sequence and a part for forming contact is subjected to patterning by a resist 7. Then, etching is performed by using 7% hydrofluoric acid solution. Etching rate of Pl-SiNx is faster than that of NSG so that Pl-SiNx is side-etched to a great extent when etching is performed. Thus, the side wall of a contact hole becomes slanted. By eliminating the resist 7, accumulating an ITO 5, and performing heat treatment, an ohmic contact is formed directly between the ITO5 and the polycrystal silicon 2 and then finally Pl-SiNx 6 of passivation is accumulated. In this manner, production process can be simplified by allowing direct contact between the ITO and polycrystal silicon.</p> |
