| 摘要 |
An apparatus for etching the surface of a substrate or a thin film formed on the surface of the substrate by generating a plasma in an atmosphere of a reduced-pressure condition. The apparatus comprises an electrode having a protective coating, a susceptor for holding the substrate in the apparatus, means for supplying high-frequency electric power of a first frequency to the electrode, and means for supplying the susceptor with high-frequency electric power of a second frequency lower than the first frequency. |
