| 摘要 |
PURPOSE:To control bonding hydrogen amount in a film due to densification of a network and chemical mutual action upon effective increase of diffusing distance of material radical on a film growing surface by providing means for positively controlling hydrogen radical or fluorine radical reaching the film growing surface near a thin film growing substrate. CONSTITUTION:Means 1a for supplying hydrogen radical or fluorine radical is provided near the surface of a board 2 in a step of growing material radical on a substrate, and the hydrogen or fluorine radical reaching a film growing region is positively controlled. That is, the supplying amount of the hydrogen or fluorine radical and a distance from the surface of the board are controlled, thereby controlling the penetration of the hydrogen or fluorine radical to a thin film growing region. Thus, a high quality amorphous silicon film, a crystalline silicon thin film having small disorder of a structure of small defective density and densified in a film or a silicon alloy thin film made of carbon, germanium, etc., can be obtained in a relatively low temperature process. |
