发明名称 INTEGRATED SENICONDUTOR COMPOSED OF ISOLATOR CIRCUIT
摘要 PURPOSE: To obtain isolation and adaptation excellent over a wide frequency band by providing a negative feedback amplifier used opposite of its substantial purpose to an isolator circuit. CONSTITUTION: The isolation circuit is made up of a field effect transistor(FET) T, having a source S, a gate G and a drain D. The FET T1 is used as a negative feedback amplifier used opposite of its substantial purpose. For this purpose, a negative feedback branch including a resistor RF is connected between the gate and the drain of the FET T1 , an input signal is applied between the source and the drain and an output signal is extracted between the source and the drain. Thus, the isolation and adaptation excellent over a wide frequency band are obtained.
申请公布号 JPH02279013(A) 申请公布日期 1990.11.15
申请号 JP19900060896 申请日期 1990.03.12
申请人 PHILIPS GLOEILAMPENFAB:NV 发明人 RAMESHIYU PINDEIA;FURANSHISU BUAN DEN BOGAATO
分类号 H03H11/38;H01P1/38;H03F3/60;H03H11/52 主分类号 H03H11/38
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