发明名称 Ohmic contact system - for semiconductors by sequential deposition and differential etching
摘要 <p>The silicon semiconductor or body within which the necessary zones of different conductivity types for thyristors, HF transistors or microelectronic circuits are already formed, is first masked with Si oxide or nitride, and contact windows formed by conventional photoetching.</p>
申请公布号 FR2138362(A1) 申请公布日期 1973.01.05
申请号 FR19710018705 申请日期 1971.05.24
申请人 ALSTHOM 发明人
分类号 H01L21/00;H01L23/482;(IPC1-7):01L7/00 主分类号 H01L21/00
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