| 摘要 |
<p>PURPOSE:To decrease a point defect in a TFT array substrate and to improve the product yield at the time of manufacturing by providing a capacity forming electrode which has a shape running along the outside peripheral part of a picture element electrode and opposed through this picture element electrode and a gate insulating film and a semiconductor film, and cutting partially this semiconductor film. CONSTITUTION:A line section line 40 formed integrally with a gate electrode 21 and a row selection line 41 formed in one body with a drain electrode 27 are roughly orthogonal to each other, and in the vicinity of its intersection, a TFT 28 is placed. Also, a capacity forming electrode 22 has a shape running along the outside peripheral part of a picture element electrode 25, and moreover, in a part opposed to a connecting part of a source electrode 26 and the picture element electrode 25, a semiconductor film 24 is cut partially. In such a case, since the source electrode 26 is formed on the picture element electrode 25 opposed to the cutting part of the semiconductor film 24 and in its vicinity, an electrical connection of the center part of the picture element electrode 25 of the outside peripheral part is obtained by the operation of the source electrode 26. In such a way, in the case of the cutting part of the semiconductor film 24 exists, the number of point defects in a display image is decreased to about 1/6, comparing with the case of it does not exist.</p> |
