| 摘要 |
PURPOSE:To efficiently obtain the excellent MgF2 film and the low reflecting film including the MgF2 film by applying an MgF2 soln. contg. MgX2 (X: halogen element excluding fluorine) and ZF (Z: NH4, quaternary ammonium, alkaline metal) or a soln. contg. the MgF2 obtd. from the MgF2-contg. soln. on a base body and heating the coating. CONSTITUTION:The MgF2 film is formed by using the MgF2 soln. contg. the MgX2 (X: halogen element excluding fluorine) and the ZF (Z: NH4, quaternary ammonium, alkaline metal) or the soln. contg. the MgF2 obtd. from the MgF2- contg. soln. For example, MgCl2.6H2O and NH4F are dissolved respectively at 0.5mol and 1mol in water and the MgCl2.6H2O soln. is stirred, then the NH4F soln. is gradually dropped to obtain the MgF2-contg. soln. This soln. is vacuum-dried for 5 hours at 100 deg.C after filtering and rinsing to obtain an MgF2 crystal. A glass substrate is dip coated in this soln. and is further coated with the soln. by a spin coater at 3000rpm rotating speed. The MgF2 film having the stable and excellent low reflecting characteristics is obtd. by the chemical technique in this way. |
