| 摘要 |
<p>A semiconductor device includes an InP substrate (1), an intrinsic InGaAs channel layer (2) formed on the InP substrate and lattice matched to the InP substrate, a doped GaAsSb carrier supply layer (3) formed on the intrinsic InGaAs channel layer and lattice matched to the InP substrate, a first gate electrode (9) formed on the doped GaAsSb carrier supply layer, and a first source electrode (7) and a first drain electrode (8) which are respectively formed on the doped GaAsSb carrier supply layer and located on both sides of the first gate electrode.</p> |
