| 摘要 |
An FET sensor apparatus comprising a sensor, a base member, and a support. The sensor comprises a semiconductor substrate having a predetermined crystal plane, a field-effect transistor formed on the semiconductor substrate, and a gate portion arranged on at least one of the major surfaces of the semiconductor substrate. The base member has a through hole in which the field-effect transistor is fitted. The support supports the sensor in the through hole in watertight fashion, with said gate portion exposed through an end of the hole. |
