OPTOELECTRONIC DEVICE

摘要

70577-64 An optoelectronic device, e.g. for integrated circuits, has an Si or III/V semiconductor layer and an insulating layer which is doped with lanthanides to generate an optical signal whose wavelength is determined by the 4f ions used. The insulating layer is preferably a fluoride which can be grown epitaxially on the semiconductor layer and the lanthanide element ion substituting for a metal ion of the material forming the insulating layer has the same valence as the metal for which it is substituted.