| 摘要 |
PURPOSE:To obtain a resistance element which is small in length but high in resistance by a method wherein the step of a lower wiring layer is provided through the intermediary of an insulating film or the step of a lower insulating layer is provided under a resistor. CONSTITUTION:A first silicon oxide film 5 is deposited on the surface of a semiconductor substrate through a chemical reaction. A first polycrystalline silicon film 11 is formed thereon. The silicon film 11 is removed leaving a part of it unremoved under a resistor which is to be formed later through a photoetching process. Then, a second silicon oxide film 12 is formed. A second polycrystalline silicon film 13 to serve as a resistance element is formed through the same method as the polycrystalline silicon film 11. As mentioned above, the first polycrystalline silicon film 11 is formed under a resistor 3 through the intermediary of an insulating film, whereby the resistor 3 is formed striding a step. Therefore, even though a resistor keeps unchanged in planar length, it becomes large in substantial length, so that the resistor high in resistance can be obtained. |
