| 摘要 |
PURPOSE: To downsize a driving circuit while maintaining operation characteristics like two-phase driving with one clock pulse by forming an n<-> doping layer in an n channel, applying a DC bias voltage between poly electrodes in a silicon electrode, and varying the thickness of an oxide film and the density of the channel and driving one phase. CONSTITUTION: A clock pulse voltage for carry-ϕcontrol is applied to a poly-2 electrode and a constant voltage of a DC bias is applied to a poly-1 electrode. Further, an oxide film layer 3 is formed between the poly-1 electrode 1a and n channel 30, the n<-> doping layer 4 is formed at part of the n channel to vary the density of the channel 30, and a thin oxide film layer 6 is formed between this n<-> doping layer 4 and poly-2 electrode 2a to form a thick oxide film layer 5 between the n channel 30 and poly-1 electrode 1b. At this time, the channel density is varied by the n<-> doping layer 4 and an n<-> part is formed at a distance from the surface.
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