发明名称 |
Multiple step metallization process |
摘要 |
Metal step coverage is improved by utilizing a multiple step metallization process. In the first step, a thick portion of a metal layer is deposited on a semiconductor wafer at a cold temperature. The remaining amount of metal is deposited in a second step as the temperature is ramped up to allow for reflow of the metal layer through grain growth, recrystallization and bulk diffusion. The thick portion of the metal layer deposited at the cold temperature is of adequate thickness so that it remains continuous at the higher temperature and enhances via filling.
|
申请公布号 |
US4970176(A) |
申请公布日期 |
1990.11.13 |
申请号 |
US19890414355 |
申请日期 |
1989.09.29 |
申请人 |
MOTOROLA, INC. |
发明人 |
TRACY, CLARENCE J.;FREEMAN, JR., JOHN L.;DUFFIN, ROBERT L.;POLITO, ANTHONY |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|