| 摘要 |
METHOD FOR MAKING A DOPED WELL IN A SEMICONDUCTOR SUBSTRATE In a method for making a doped well in a semiconductor substrate, a dopant is implanted directly into an exposed surface of a semiconductor substrate through an opening in a dopant absorbing coating and the substrate is heated to drive the implanted dopant further into the substrate. Because the dopant is implanted into an exposed surface of the substrate, oxidation and oxide etch steps used in conventional methods are eliminated. This method requires fewer steps than the conventional method, and is particularly applicable in the fabrication of CMOS devices. |
