| 摘要 |
PURPOSE:To avoid any out of focus during the exposure process of a pattern in small line width while augmenting the throughput during the exposure process of another pattern in relatively large line width by a method wherein the width dimension of a slit controlling the expansion angle of laser beams is changed corresponding to the line width of the pattern to be exposed. CONSTITUTION:The expansion angle of laser beams L outputted from a laser oscillator 1 is controlled by a slit 28 provided by a pair of slit sheets 25, 26 and simultaneously the laser beams L in the central wavelength corresponding to an oblique angle of a diffracttion grating 8 are oscillated by an output mirror 6 so as to be entered into an exposure part 9. Thus, the laser beams L expose a pattern formed on a reticle 12 to a wafer 14 provided in the exposure part 9. For example, when the minimum line width of the pattern exposed to the wafer 14 exceeds 1mum, the width dimension W of the slit 28 provided by the pair of slit sheets 25, 26 is set up to be 10mm by a driving motor 18 while when the minimum line width is 1-0.7mum, the width dimension of the slit is set up to be 7mm. |
