MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent an etching residue of a protective film from being produced by a method wherein a substratum wiring part is formed, the protective film is formed, a metal film is formed, a window is formed in a bump formation region, a metal bump is formed by a plating method and a metal conductive film is etched and removed. CONSTITUTION:Wiring parts 3 connected to a semiconductor element are formed on a semiconductor substrate 1 where the semiconductor element has been formed; substratum films 5 for a plating operation are formed in regions which are situated on the wiring parts 3 and on which metal bumps 10 are to be formed; a protective film 6 is formed on the whole surface; it is etched selectively; first windows 6a are opened; the substratum films 5 are exposed. Then, a metal film 8 is formed on the whole surface; second windows whose openings are smaller than those of the first windows 6a are opened inside the first windows; a selective etching operation is executed by making use of a photoresist film 9 as a mask in such a way that the metal film 8 is connected to end parts of the substratum films 5; the substratum films 5 are exposed. In addition, an electrolytic plating operation is executed by using the metal film 8 as an electric current path on the side of a cathode; the metal bumps 10 are formed on the substratum films 5 inside the second windows; the photoresist film 9 is removed; the exposed metal film 8 is etched and removed. Thereby, it is possible to prevent an etching residue from being produced on an outermost layer part of the bumps.