发明名称 MANUFACTURE OF SEMICONDUCTOR CIRCUIT BUMP
摘要 <p>PURPOSE:To make uniform the laminated height of low-melting point metal layers, such as a solder layer and the like, and to prevent a failure of bonding from generating by a method wherein a gold layer and a metal layer having a melting point of a specified temperature or lower are laminated on an external terminal obtainable by laminating selectively a palladium layer and a nickel alloy layer in order on the wiring metal layer of a semiconductor integrated circuit. CONSTITUTION:A palladium layer 4 is formed on an Al layer 2 which is a bonding pad. Then, a nickel-phosphorus alloy layer 5 is plated in an electroless plating bath. Then, a metal layer 6 is plated with an electroless gold plating solution. Lastly, the layers 2, 4, 5 and 6 are dipped into a heated solder bath while being applied ultrasonic waves to laminate a solder layer 7 having a melting point of 350 deg.C or lower and a bump is manufactured.</p>
申请公布号 JPH02276249(A) 申请公布日期 1990.11.13
申请号 JP19890097781 申请日期 1989.04.18
申请人 SEIKO EPSON CORP 发明人 KARASAWA YASUSHI
分类号 C23C2/04;C23C28/02;H01L21/321;H01L21/60 主分类号 C23C2/04
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