| 摘要 |
PURPOSE:To obtain a sintered AIN having high density and high thermal conductivity and useful as a substrate of a large-scale integrated high-power semiconductor by adding Y powder as a sintering assistant to AIN powder, forming the mixture and calcining in a non-oxidizing atmosphere. CONSTITUTION:The objective sintered AIN can be produced by mixing 100 pts.wt. of powder composed mainly of AIN with 0.05 to 5 pts.wt. of a sintering assistant consisting of Y powder preferably covered with a Y2O3 layer having a thickness of <=10nm, forming the mixture and calcining at 1400 to 2000 deg.C in a non-oxidizing atmosphere. The covering of the Y powder with Y2O3 is effective in preventing the deterioration of Y with oxygen, moisture, etc., in air and improving the handleability of the powder. |
