| 摘要 |
PURPOSE:To reduce capacitance to ground, and to accelerate the speed of operation by generating a crystal lattice defect through the irradiation of radiation to a semiconductor, bringing the semiconductor to semi-insulating property and manufacturing the semiconductor device while using the semiconductor, only the surface thereof is changed into a semiconductor, as a substrate. CONSTITUTION:The crystal lattice defect is generated through the irradiation of radiation to the semiconductor, the semiconductor is brought to the semi-insulating property as a whole, only the surface is changed into the semiconductor, and the semiconductor device is prepared while using the semiconductor as the semiconductor substrate. Thermal neutron rays are irradiated to a substance such as silicon as a semiconductor material and the lattice defect is generated while one part of the silicon is nuclear-transformed to phosphorus. Either of a laser, electron beams or ion beams are irradiated to the silicon substrate 1 irradiated under a condition that the protective film 2 of Si3N4 is formed, the surface of the semiconductor is kept at the temperature of 600 deg.C or lower and the substrate is annealed. Accordingly, only the surface layer 3 of the semiconductor material is changed into the semiconductor, and every kind of semiconductor devices are manufactured while employing the substrate as the semiconductor substrate.
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