SEMICONDUCTOR MEMORY AND MANUFACTURE THEREOF

摘要

PURPOSE:To form two cell one contact by connecting a polysilicon node to source or drain of a transfer gate of each cell via the sidewall of each cell. CONSTITUTION:A polysilicon node 3 of a capacitor memory node of a thin polysilicon surrounds the outer surface of a dielectric film 11 on a trench sidewall, its part is divided at two positions, and part of each node 3 is connected to source 14 or drain of one cell. The inner part of the other trench is separated from a silicon substrate 8 via an oxide film 2. The film 11 is formed on the node 3, and a polysilicon plate 7 is formed at all the center of the trench as a plate. An insulator 9 such as an oxide film is buried at the top of the trench to form an element isolating part. Thus, two cell one contact can be formed.