| 摘要 |
PURPOSE:To prevent a crown from being generated at the mounting part of the surface side and a semiconductor cut from occurring at the chamfered side of the rear surface side by making the angle between the slanted surface of the chamfered part of the rear surface side and a main surface to be greater than that at the chamfered part of the front surface side. CONSTITUTION:In a semiconductor silicon wafer 1, a chamfering width W3 at the front surface side is equal to a chamfering width W4 of a chamfering part 1b at the rear surface side and the chamfering angle theta4 = arc tan (d4/W4) at the rear surface side is greater than the chamfering angle theta3 = arc tan (d3/W3) of the front surface side. Namely, a chamfering depth d4 at the rear surface side is deeper than a chamfering depth d3 at the surface side. Thus, the chamfered parts at the front and rear are asymmetrical, thereby fully enabling crown from being generated at the chamfered part 1a at the surface side. On the other hand, the chamfered part 1b at the rear surface side can be constituted independently so that cut of the semiconductor wafer 1 can be prevented. |
