| 摘要 |
PURPOSE:To decrease cracks generated in a cover film, and to improve moisture resistance by forming an opening section to an insulating film and shaping a stepped section to a guard ring formed onto the insulating film and the cover film. CONSTITUTION:A stepped section is generated to a guard ring 7 and a cover film 9 by an opening section 8 shaped in a substrate insulating region 3. Consequently, the film thickness of an insulating film 4 and the guard ring 7 is determined so as not to generate stepped disconnection, thus preventing the increase of the wiring resistance value of the guard ring 7 by shaping the opening section 8. The concentration of stress applied to the peripheral section of a semiconductor substrate from a molding resin, etc., can be dispersed in the multi-directions by the stepped section formed in the guard ring 7 and the cover film 9 by the opening section 8. Accordingly, cracks generated in the guard ring 7 and the cover film 9 can be obviated, thus preventing the defects of an IC such as defective moisture resistance due to the generation of the cracks. |
