| 摘要 |
PURPOSE:To enable the laser scribing of an amorphous silicon P-I-N layer and a transparent electrode film from the insulating substrate side, and remarkably reduce the manufacturing process of an integrated type solar cell, by setting bonded hydrogen amount and the like in a film of at least one layer out of the amorphous silicon P-I-N layer, higher than or equal to 25 at %. CONSTITUTION:A metal electrode layer 2 is formed on an insulative substrate l; from the direction of the insulative substrate 1, laser rays are projected, thereby forming a scribe line 6a; an amorphous silicon P-I-N layer 3 and a transparent electrode layer 4 are formed; the scribe line 6a is filled with the amorphous silicon P-I-N layer 3. The bonded content of hydrogen contained in a film of at least one layer out of the amorphous silicon P-I-N layer 3 is larger than or equal to 25 at %. Thereby dissolution and recrystallization of the transparent electrode layer 4 and the amorphous P-I-N layer 3 are not caused at the time of laser scribing, and the scribe line can be formed without forming an insulating layer. |
