| 摘要 |
PURPOSE:To measure electric characteristics such as a threshold voltage, by connecting a source electrode of a dummy MOS for measurement and a substrate, and positively obtaining the substrate potential from the surface. CONSTITUTION:An MOS element 12 constituting an internal circuit and the dummy MOS element 13, which is used for measuring the electronic characteristics of said element, are provided on a common semiconductor substrate 11 in the integrated circuit. In this circuit, the dummy MOS13 is constituted by a source region 1, a drain region 2, a gate oxide region 16, a gate electrode 5, and electrodes 21 and 23 which function as pads to which a probe is touched at the time of measurement. The source electrode 21 is connected to a wiring 10 which is connected to the substrate 11, via a through hole 4 which is formed in a field oxide film 3 so as to surround the dummy MOS. In this constitution, the substrate potential of the dummy MOS is kept uniform, and the measurement errors in the threshold voltage and the like are suppressed to the minimum. |
