发明名称 Integrated ferroelectric capacitor.
摘要 <p>An integrated ferroelectric capacitor (22) includes a PZT dieelectric (32) disposed in a contact window over a source region (18) of a field effect transistor. A top electrode (26a) contacts the upper surface of the PZT and interfaces to a conductive line (28a) which may operate as a plate line or a ground line.</p>
申请公布号 EP0396221(A2) 申请公布日期 1990.11.07
申请号 EP19900301199 申请日期 1990.02.06
申请人 RAMTRON CORPORATION 发明人 GNADINGER, ALFRED P.;HORTON, RICHARD L.
分类号 G11C11/22;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;H01L29/92 主分类号 G11C11/22
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