ZETSUENGEETOGATADENKAIKOKATORANJISUTA

摘要

Disclosed is an integrated circuit field effect transistor having a source and drain which protrude above the silicon substrate so as to create shallow junctions with the substrate while maintaining a relatively low sheet resistivity in the region. Two self-aligned source and drain fabrication processes are disclosed for the device. The first process yields a polysilicon field shield and the second process yields a field region composed of thermal silicon dioxide.