发明名称 Plasma etching apparatus with surface magnetic fields.
摘要 <p>A glow discharge etching apparatus includes a magnetic assembly 14,16,18 and 22, for creating a surface magnetic field in close proximity to the walls 30,32 of an etching chamber 12. An electrode 38 is located within the chamber for supporting the object 40 to be etched. A radio frequency signal is applied to the electrode so that it will emit secondary electrons upon bombardment by ions from an etching plasma created within the apparatus. A control plate 34 may be positioned at various locations within the apparatus to regulate the amount of electron leakage to the control plate and thereby regulate the etching process. This apparatus provides improved uniformity and directionality of etching due to a low gas pressure and the surface magnetic field.</p>
申请公布号 EP0396398(A1) 申请公布日期 1990.11.07
申请号 EP19900304765 申请日期 1990.05.02
申请人 WISCONSIN ALUMNI RESEARCH FOUNDATION 发明人 HERSHKOWITZ, NOAH (NMI);CHO, MOO-HYUN
分类号 C23F4/00;H01J37/32;H01L21/302 主分类号 C23F4/00
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