Protection device against the breakdown of bipolar transistors in an integrated driving circuit for power device with resonant load on the collector.

摘要

The protection device (3) comprises automatic commutating means (QP1, QP2; QP3) interposed between the base of the transistor (Q2) to be protected and the collector of the power device (Q3, Q4) to cause a flow of current having a low voltage drop between said base and said collector when the collector voltage (Vc) falls below a predetermined value.