| 摘要 |
<p>A semiconductor laser comprises a substrate (1) having a two step-striped channel; and a double heterostructure-laser-operating area having successively a cladding layer (3), an active layer (4) and a second cladding layer (5) on said substrate. The two step-striped channels (11) are composed of a first channel (9) and a second channel having a width (W2) which is narrower than that (W1) of the first channel and having a depth (D2) which is deeper than that (D1) of the first channel. The second channel (10) is positioned in the centre portion of the first channel, thereby allowing current injected into said active layer to flow into the centre portion of said two step-striped channel. The first channel has a selected width to form window regions in the vicinity of the facets of the laser, and the active layer is a plane-shape in each of said window regions in the vicinity of the facets of the laser and a crescent-shape in the other region in the inside of the laser, resulting in a window stripe semiconductor laser.</p> |
