| 摘要 |
According to a method of manufacturing a semiconductor device with a semiconductor element, a wiring layer is formed on a semiconductor substrate on which a semiconductor element is formed. A first window is formed to expose a first surface portion of the wiring layer in a protective film which covers the entire surface of the semiconductor substrate. A metal film is formed on the entire surface including the first protective film and within the first window. A second window having an opening smaller than that of the first window is formed in the metal film to expose a second surface portion of the wiring layer within the first surface portion. Electrolytic plating is performed using the metal film as a current path to form a projecting metal electrode on the second surface portion of the wiring layer in the second window. Thereafter, the metal film is removed. |
