| 摘要 |
PURPOSE:To enhance a detection accuracy of a pattern position by a method wherein marks composed of a substance whose electron reflectance is larger than that of a thin film to be aligned are formed on sidewalls of a groove of a pattern for alignment use. CONSTITUTION:Marks 5 composed of a substance whose electron reflectance is higher than that of a thin film 3 to be aligned are formed on sidewalls of a groove of a pattern 2 for alignment use; when an electron beam is scanned along the pattern 2 for alignment use, a reflection electron intensity is intensified locally on the marks 5 and a difference in the reflection electron intensity between the marks and a scanned region of the pattern 2 for alignment use becomes large. Accordingly, it is possible to obtain a large differential intensity as compared with a case where the marks 5 do not exist. Thereby, positions of the sidewalls of the pattern can be detected clearly and an alignment accuracy can be enhanced. |
