| 摘要 |
<p>PURPOSE:To prevent the generation of a disconnection by anodic oxidation of a surface and to obtain the electronic device which is free from an interlayer short-circuiting by constituting the device in such a manner that the taper angle at the end part of the 1st metallic layer constituting a lower metallic film with a substrate is smaller than the taper angle of the 2nd metallic film. CONSTITUTION:A MoTa alloy contg. >=50atomic% Ta is used for the 1st metal lic film of the electronic device formed with the substrate, the lower metallic film consisting of the laminated films of the 1st metallic film and 2nd metallic film formed on the substrate and the upper metallic film formed on the anodized film of the metallic film formed on the lower metallic film and a MoTa alloy contg. the Ta at the ratio higher than in the 1st metallic film is used for the 2nd metallic film. The MoTa-2 is constituted of the MoTa contg. the Ta at the higher ratio than the MoTa-1 and, therefore, if the etching is executed under the conditions of a small partial pressure of O2 with such combination, the taper angle of the MoTa-1 is smaller than the taper angle of the MoTa-2. The generation of the disconnection is, therefore, prevented and the interlayer short-circuiting is eliminated at the time of forming the anodized film.</p> |
