| 摘要 |
<p>PURPOSE:To rapidly measure the crystal orientation and crystal orientation distribution of a single crystalline material or polycrystal material by allowing parallel luminous flux to be incident on the surface of a crystal body and detecting the angle of emitting the reflected light from the crystal body with respect to the incident angle. CONSTITUTION:Fine luminous flux 1 is incident on the surface of a sample 2 whose crystal face appears at an incident angle alpha and the light 3 reflected at an emitting angle beta enters a photodetector 4. The incident angle alpha to the surface of the sample 2 and the position of the photodetector 4 are made movable centering around the light incident point on the surface of the sample 2. The position of the photodetector 4 is moved with respect to the incident angle alpha arbitrarily set to detect a position where the output of the photodetector 4 becomes max. At this time, the normal line of the crystal face passes the light incident point on the surface of the sample and coincides with the segment bisecting the angle formed by the segments connecting a light incident line and the light incident point to the photodetector 4. Therefore, even when the position where the output of the photodetector 4 becomes max. is detected, by measuring the direction of the normal line of the crystal face, that is, the direction of a crystal axis in the same way, a crystal orientation can be determined.</p> |
