发明名称 |
Method of haze-free polishing for semiconductor wafers |
摘要 |
A polishing process in which haze-free semiconductor wafers can be obtained in a single-stage process in which an initial phase of the polishing operation is carried out in the usual manner in the alkaline region. This initial stage is followed by a final phase in which polishing is carried out, at a pH of 3 to 7, in the presence of additives in the polishing agent which reduce the amount of material removed by polishing. Consequently, it may be possible to dispense with polishing agent components which act mechanically. Both phases can be carried out on one and the same equipment without interrupting the polishing operation.
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申请公布号 |
US4968381(A) |
申请公布日期 |
1990.11.06 |
申请号 |
US19880250394 |
申请日期 |
1988.09.28 |
申请人 |
WACKER-CHEMITRONIC GESELLSCHAFT FUR ELEKTRONIK-GRUNDSTOFFE MBH |
发明人 |
PRIGGE, HELENE;SCHNEGG, ANTON;BREHM, GERHARD;JACOB, HERBERT |
分类号 |
H01L21/304;H01L21/306 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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