| 摘要 |
PURPOSE: To enable processing at an economical speed as a single wafer processing system, by providing the process speed with high pressure and high temperature. CONSTITUTION: A semiconductor wafer is placed in a treatment chamber 16 inside a pressure cell 12, the treatment chamber 16 is pressurized by an oxidizing agent such as steam, a heater is placed outside the treatment chamber 16, and the inside of the chamber is heated. The treatment chamber 16 is not sealed from the outside pressure cell 12 and treatment is performed by a steam generating/condensing device for forming an equalization system. The steam is generated by a boiler 62 inside the pressure cell 12, flows through the treatment chamber 16 and when the process is completed, the steam is discharged through a condenser unit together with nitrogen. Thus, an oxide is generated on a single wafer and high productivity and optimum operating conditions can be provided.
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