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经营范围
发明名称
Metal conductor structure having low electro-migration at high currents for semiconductor devices
摘要
申请公布号
USH842(H)
申请公布日期
1990.11.06
申请号
US19890374116
申请日期
1989.06.30
申请人
发明人
分类号
H01L23/485
主分类号
H01L23/485
代理机构
代理人
主权项
地址
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