| 摘要 |
A high power semiconductor rectifier is constructed so that the rectifier is normally off and can be switched on by applying a bias signal to a gate of a metal-insulator-semiconductor structure monolithically integrated with the rectifier in such a manner as to induce a conducting channel between the anode and cathode of the rectifier. The device has both forward and reverse blocking capability and a low forward voltage drop when in the conducting state. The device has a very high turn-off gain and both high dV/dt and di/dt capabilities.
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