| 摘要 |
PURPOSE:To reduce the difference between the pattern of the photoresist and that of the material to be etched by etching by silylating the photoresist formed into a pattern and hardening it to convert it into the resist containing SiO2. CONSTITUTION:The material 2 to be etched, such as Mo, is grown on a semiconductor substrate 1, and this layer 2 is coated with the positive type photoresist and formed into the pattern 3. The resist pattern 3 is irradiated with ultraviolet rays 6 to produce, for example, indenecarboxylic acid, and the surface layer of the pattern 3 is silylated in an atmosphere of hexamethyldisilazane kept at a desired temperature. The silylated surface layer 4 is treated by O2 plasma and converted into the surface layer 5 containing SiO2, and the resist pattern 3 having the layer 5 formed is used as a mask and the material 2 is dry-etched, thus permitting the dimensional difference between the resist pattern and the pattern of the material 2 obtained by etching to be made small. |
