| 摘要 |
The present invention relates to a metal-oxide-semiconductor device containing a plurality of units on one semiconductor substrate. The device has a high impurity concentration region of the same conductivity type as a base layer formed near each corner of a source layer and provides improved current capacity in power applications. The high impurity concentration regions reduce a diffusion resistance in the vicinity of the corners of the source layer, thereby improving resistance of each unit to breakdown under electrical stress.
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