| 摘要 |
PURPOSE:To prevent a characteristic of a diamond semiconductor layer from being deteriorated by a method wherein the surface of a semiconductor element whose semiconductor layer is formed of a diamond is covered with an insulating protective film of the diamond whose insulating property is excellent. CONSTITUTION:The surface of a semiconductor element using a diamond as a semiconductor material 2 is covered with an insulating protective film 9 composed of the diamond. That is to say, the semiconductor diamond layer 2 is not exposed directly to an atmosphere of oxygen even when it is left at a high temperature and in the atmosphere of oxygen; accordingly, a resistance value is not changed by a reaction with oxygen; a characteristic of the semiconductor diamond layer 2 can be kept stable. Thereby, it is possible to increase durability at a high temperature of the semiconductor element. |
