发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent a contamination in a posterior process and to prevent a dicing cutter from being worn away by a method wherein a conductive material inside a contact hole is left and the conductive material inside an opening part is removed by a nondirectional etching operation. CONSTITUTION:A contact hole and an opening part whose area is larger than that of the contact hole are formed in an insulating layer which has been applied onto a water; the contact hole end the opening part are filled with a conductive material; the conductive material inside the contact bole is left and the conductive material inside the opening part is removed by a nondirectional etching operation. That is to say, when a nondirectional plasma etching operation is executed, tungsten which has been filled into the contact hole of a large aspect ratio is hardly etched and is left; contrary to this, tungsten in a part of a small aspect ratio such as a scribing line or the like is removed completely. Thereby, it is possible to prevent a contamination in a posterior process and to prevent a dicing cutter from being worn away.</p>
申请公布号 JPH02271553(A) 申请公布日期 1990.11.06
申请号 JP19890092468 申请日期 1989.04.12
申请人 FUJITSU LTD 发明人 MISAWA NOBUHIRO;OBA TAKAYUKI;HARA SHIGE;SUZUKI HISACHIKA
分类号 H01L21/301;H01L21/302;H01L21/3065;H01L21/78 主分类号 H01L21/301
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