| 摘要 |
PURPOSE:To provide a title device with high current density and satisfactory controllability by connecting a MOSFET formed on a thylister substrate to one, emitter layer and an adjacent base layer. CONSTITUTION:A first gate 91 is connected to a gate terminal G1 with a second gate 92 connected to a gate terminal G2, and an emitter electrode 10 connected to an emitter terminal E makes contact with a source layer 6. A first drain layer 81 is connected to an N emitter layer 4 through a wiring 11 with a second drain layer 82 connected to a p-base layer 3 through a wiring 12. An anode electrode 13 connected to an anode terminal A makes contact with a p-emitter layer 1. Accordingly, the device can be driven in its on/off operation by an insulating gate. Further, since a thylister is used to permit a current to flow substantially over the entire surface of the semiconductor substrate in a thickness direction, current density can be made high. Additionally, since there is no parasitic effect, there is no problem of the device being broken down by latching-up. Thus, the device can securely be switched on/off by gate driving at high current density. |
