| 摘要 |
<p>PURPOSE:To make it possible to obtain a highly reliable semiconductor device at a high yield by a method wherein conductive layers existing on step parts at each dicing region are left intact without being etched. CONSTITUTION:In case a semiconductor device is manufactured using a semiconductor wafer having a plurality of semiconductor chip formation regions SA, dicing regions DL for separating the regions SA into individual chips and step regions 80a to 80d formed at the regions SA opposing to each other pinching the region DL between them, a conductive layer 11, which is extended from one region SA to the regions SA opposing to each other through the region DL and lies on the regions 80a to 80d, is formed. After that, the layer 11 is covered with a resist film on the regions 80a to 80d and the layer 11 is etched using resist films 131 and 132 obtainable by patterning the resist film as masks to contrive to leave conductive layers 113 and 114 on the regions 80a to 80d.</p> |
