| 摘要 |
PURPOSE:To reduce improper wirings due to precipitated Si, adhered dust, etc., on an insulating film and to prevent a manufacturing yield from decreasing by selectively growing an Si layer in an opening by a selective vapor growing method, and then polishing the surface of the insulating film. CONSTITUTION:A field oxide film 7 is formed on a P-type Si substrate 1, a gate oxide film 8, a gate electrode 9 are formed on the surface of the substrate 1 surrounded by the film 7, a source region 2s, a drain region 2d made of N-type diffused region are formed, an Si oxide film 3a, a BPSG film 3b are formed on the whole surface, annealed to flatten the surface, and an Si oxide film 3c is then deposited. Then, openings 5s, 5d are formed by a RIE method, single crystalline Si layers 6s, 6d are buried therein by a selectively epitaxially growth method, and the surface of the film 3 is then polished. Thereafter, an Al alloy layer is deposited, patterned, and a source wiring layer 4s and a drain wiring layer 4d are formed. |
