| 摘要 |
PURPOSE:To eliminate influence of a side spacer on contact resistance by removing part of the side spacer corresponding to a direct contact region. CONSTITUTION:A field oxide film 14 is formed on a P-type Si substrate 15. In this case A P<+> type isolation region 18 in which B is implanted is formed under the film 14. A channel-doped region in which B is implanted is formed on a part to become under a gate electrode of a transistor is formed. An oxide film 16 is formed on the substrate 15 except the film 14, an Si layer 9 is formed thereon, P is implanted, and patterned to form a gate electrode. With the layer 9 as a mask, P is implanted to form a diffused layer 17. An insulating oxide film is formed on the substrate 15, and anisotropically etched to form a side spacer 10 on the sidewall of the gate electrode. Then, an N<+> type diffused region 12 in which As is implanted is formed to complete a drain. A resist film 24 is formed on the substrate 15, patterned, with it as a mask it is etched, an N<++> type region 21 is formed, and a polycrystalline Si layer 13 is formed thereon. |
